Localization effects in InGaAsN multi-quantum well structures

Current injection efficiency of InGaAsN quantum-well lasers

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

Effects of growth pause on the structural and optical properties of InGaAsN–InGaAsP quantum well

Optical and structural characterizations were conducted on an InGaAsN quantum well (QW) with large energy bandgap barrier material consisting of InGaAsP (Eg 1⁄4 1:62 eV) grown by metalorganic chemical vapor deposition. A growth pause annealing technique substantially improves both the structural and the optical quality of the QW. With an optimum growth pause of 14 s, surface roughness reduces b...

The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure th...

Quantum well intermixing in GaInNAs/GaAs structures

Exciton condensate in semiconductor quantum well structures.

We propose that the exciton condensate may form in a well-controlled way in appropriately arranged semiconductor quantum well structures. The mean-field theory of Keldysh and Kopaev, exact in both the high density and the low density limits, is solved numerically to illustrate our proposal. The electron-hole pairing gap and the excitation spectrum of the exciton condensate are obtained. The ene...